IEEE Sweden

Location: Faculty lounge, elevator C, floor 2, Electrum, Kista Tsunenobu Kimoto (Kyoto University) Abstract: SiC has attracted increasing attention as a wide bandgap semiconductor suitable for advanced power devices. In this seminar, progress in 1 kV-class SiC trench MOSFETs and characterization of the MOS interface are presented. 3 kV reverse-blocking SiC MOSFETs toward a bidirectional switch are also demonstrated. In... Read more →

Location: Faculty Lounge, Elevator C, floor 2, Electrum, Kista Title: Motivations and Challenges for Silicon Carbide Integrated Circuit Technology Presenter: H. Alan Mantooth Affiliation: University of Arkansas, USA Abstract High temperature operation is typically noted as the driving factor for pursuing silicon carbide integrated circuitry. This talk suggests other motivations in addition to the thermal properties... Read more →