SiC device manufacturing using ion implantation: Opportunities and challenges
KTH Electrum Kista, Room Grove, Elevator C floor 4 Electrum, KistaDr. Tobias Erlbacher Fraunhofer Institute of Integrated Systems and Device Technology IISB, Erlangen, Germany Abstract Manufacturing of vertical power transistors utilizes doping by ion implantation. However, in contrast to... Read more