High Mobility Enhancement Mode 4H-SiC MOSFETS Using a Thin SiO2 / Al2O3 Gate Stack
KTH EECS Sal B Peter Weissglas Kistagången 16, KistaSpeaker: Prof. Anthony O'Neill, Newcaslte University, UK Abstract— High performance 4H-SiC MOSFETs have been fabricated, having a peak effective mobility of 265 cm2/V.s, and a peak field effect mobility of 154... Read more