Location: Faculty Lounge, Elevator C, floor 2, Electrum, Kista

Title: Spintronic memory

Presenter: Mattias Ekström

Affiliation: KTH Royal Institute of Technology, Dept. of Electronics

Abstract

Controlling the magnetisation direction in a ferromagnet is one of the oldest, and still used, methods for computer data storage. Spintronics, an emerging technology field where both spin- and charge-flow are controlled, has offered new methods for both reading and writing magnetic memory devices. In this seminar, an overview of spintronic magnetoresistive random access memory (MRAM) is presented. The magnetic tunnel junction (MTJ) and its properties are discussed, different write methods are presented and memory cell architectures are compared.

Bio

In 2014, Mattias Ekström received his master of science in engineering (sv. civilingenjör) in microelectronics from KTH Royal Institute of Technology. He has been studying towards a PhD degree at KTH since 2014. He is currently working in the projects Working on Venus (www.workingonvenus.se), an extreme environment electronics project, and Novoflop, a spintronic project.