Location: Faculty Lounge, Elevator C, floor 2, Electrum, Kista

Title: Motivations and Challenges for Silicon Carbide Integrated Circuit Technology

Presenter: H. Alan Mantooth

Affiliation: University of Arkansas, USA

Abstract

High temperature operation is typically noted as the driving factor for pursuing silicon carbide integrated circuitry. This talk suggests other motivations in addition to the thermal properties of the material as reasons for pursuing this technology. The current state of the field is briefly reviewed and key challenges are identified. Example analog and mixed-signal circuits developed by the University of Arkansas’ team are described, which in some cases illustrate these challenges.

Bio

Alan Mantooth Distinguished Professor and 21^st Century Research Leadership Chair. Dr. Mantooth has 17 years of academic experience in addition to eight years in industry. He has served in several leadership positions in both industry and academe, and currently serves as Executive Director for the NSF Research Center on Grid-connected Advanced Power Electronic Systems (GRAPES) and as Deputy Director for the NSF Engineering Research Center for Power Optimization of Electro-Thermal Systems (POETS). He ran a research group of 10 engineers for 3 years in industry on a project worth nearly $5M. Since its inception in 2005 he has served as the Executive Director of the National Center for Reliable Electric Power Transportation (NCREPT) and overseen its research and building program, which includes a 6 MVA test facility that was completed in 2008. Dr. Mantooth has published well over 300 refereed articles in modeling and electronic design and packaging, as well as three books. He is an IEEE Fellow, has served on the IEEE PELS Advisory Committee since 2004 and was elected PELS President for 2017 and 2018.