The distinguished lecture on “Hexagonal boron nitride based electronic devices and circuits: status and prospects” was held on May20, 2021.  It was organized by the EDS Germany Chapter and co-sponsored by the NanoP from THM – University of Applied Sciences. The DL was attended by 14 IEEE participants, as well as other non IEEE members. The… Read more →

The EDS Germany Chapter and NanoP proudly presents Gana Nath Dash from Sambalpur University, India for a Distinguished Lecture on “Tunneling Graphene FET”. The lecture will be held on 30th June 2021 at 1pm Berlin time. The DL is held in advanced to the 5th Symposium on Schottky barrier MOS devices. Interest participants please register… Read more →

The Symposium on Schottky Barrier MOS (SB-MOS) devices is held in the timeframe of the Graduated Student Meeting of URV on June 30th at the University Rovira i Virgili, Spain. This is the first joint R&D event between the URV and Symposium of SB-MOS. This year the joint R&D event is sponsored by the URV,… Read more →