The Symposium on Schottky Barrier MOS (SB-MOS) devices is held in the timeframe of the Graduated Student Meeting of URV on June 30th at the University Rovira i Virgili, Spain. This is the first joint R&D event between the URV and Symposium of SB-MOS.
This year the joint R&D event is sponsored by the URV, THM, the IEEE EDS Spain & Germany Chapter, and organized by Dr. Laurie Calvet (C2N, Palaiseau, France), Prof. Mike Schwarz (NanoP THM, Germany), Prof. Alexander Kloes (NanoP THM, Germany), Prof. Lluis Marsal (DEEEA, URV), and Prof. Benjamin Iniguez (DEEEA, URV) and the staff at the URV.
Our joint R&D event starts on June 30th with the Symposium of SB-MOS. On July 1st and July 2nd the Graduated Student Meeting is held. The following speakers have confirmed their invitations: Dr. Radu Sporea (DEEEA, Glasgow University, Scotland), Dr. Laurie E. Calvet (C2N, CNRS-Université Paris-Sud, France), and further.
Attendees are welcome to participate in our joint R&D event. Further information is present at
Symposium of SBMOS
Graduated Student Meeting
To register for the event use the vTools of IEEE with following link: