The EDS Germany Chapter and NanoP proudly presents Gana Nath Dash from Sambalpur University, India for a Distinguished Lecture on “Tunneling Graphene FET”. The lecture will be held on 30th June 2021 at 1pm Berlin time. The DL is held in advanced to the 5th Symposium on Schottky barrier MOS devices. Interest participants please register via IEEE vTools by the following link:

Biography Gana Nath Dash:
Dr. G. N. Dash served as a Professor at Sambalpur University from 2001 to 2015. After superannuation, he continues to guide the Ph.D. scholars registered under him in the same university. He has more than 40 years of teaching and research experience during which he has authored/co-authored more than 225 research papers in International/National Journals and Conference proceedings. He has supervised 12 Ph. D. and 37 M. Phil. Students with some 3 more on the pipeline for their Ph.D. degree. Dr Dash has the distinction of guiding Ph. D. in both Science and Engineering. Dr. Dash is a Fellow of the Institution of Engineering and Technology (IET) – UK. In addition he is also a Fellow Assessor of the same Institution. Besides, he is also a Fellow of the Institution of Electronics and Telecommunication Engineers (IETE), India, a Senior Member of the Institution of Electrical and Electronics Engineers- USA (IEEE), and Members of various IEEE societies. He is recognized as a Distinguished Lecturer of the IEEE Electron Devices Society (EDS). He has reviewed extensively for journals such as IEEE Transaction on Electron Devices (USA), International Journal of Electronics (U.K.), Circuits, Systems and Signal Processing (Springer), Journal of Computational Electronics (Springer), Journal of Semiconductors (IOP-UK), and Applied Physics – A (Germany). Dr. Dash has published a book titled “Electronic Devices and Circuits” which is published by Universities Press, Hyderabad; the first edition has come out of the press in August 2017.