75 Years of the Transistor by Prof. Cor Claeys
The EDS Germany Chapter organized a hybrid distinguished lecture entitled “Memories from Storage to Computing” on April21, 2023. The lecture was given by Prof. Cor Claeys from KU Leuven, IEEE Fellow, and was organized by Prof. Alexander Kloes and Prof. Mike Schwarz fromthe Competence Center for Nanotechnology and Photonics (NanoP) of THM – University of… Read more
75 Years of the Transistor – Trends and Challenges in Micro- and Nanoelectronics for the Next Decade by Prof. Cor Claeys
The EDS Germany Chapter and NanoP proudly presents Cor Claeys from KU Leuven, Belgium for a Distinguished Lecture on “75 Years of the Transistor – Trends and Challenges in Micro- and Nanoelectronics for the Next Decade”. The lecture will be held on 21st April 2023 at 2pm Berlin time. The Distiguished Lecture will be held… Read more
Rajiv Joshi presented “Memories from Storage to Computing”
The EDS Germany Chapter organized a hybrid distinguished lecture entitled “Memories from Storage to Computing” on December 14, 2022. The lecture was given by Dr. Rajiv Joshi from IBM – T. J. Watson Research Center, IEEE Fellow, and was organized by Prof. Alexander Kloes and Prof. Mike Schwarz from the Competence Center for Nanotechnology and… Read more
Rajiv Joshi Distinguished Lecture on 14th December 2022
The EDS Germany Chapter and NanoP proudly presents Rajiv Joshi from IBM, T. J. Watson Research Center, US for a Distinguished Lecture on “Memories from Storage to Computing”. The lecture will be held on 14th December 2022 at 12am Berlin time. The Distiguished Lecture will be held in hybrid format, on site (TH Mittelhessen, Wiesenstraße… Read more
How to report and benchmark emerging field-effect transistors
One of the challenges encountered by research on novel electronic devices is to compare devices based on different materials in a consistent way.RWTH Professor Max Lemme and colleagues from USA, China, and Belgium have now proposed a set of clear guidelines for benchmarking key parameters and performance metrics of emergent field-effect transistors. The guidelines have… Read more