IEEE Germany EDS Chapter

The EDS Germany Chapter organized a hybrid distinguished lecture entitled “Memories from Storage to Computing” on December 14, 2022. The lecture was given by Dr. Rajiv Joshi from IBM – T. J. Watson Research Center, IEEE Fellow, and was organized by Prof. Alexander Kloes and Prof. Mike Schwarz from the Competence Center for Nanotechnology and… Read more →

The EDS Germany Chapter and NanoP proudly presents Rajiv Joshi from IBM, T. J. Watson Research Center, US for a Distinguished Lecture on “Memories from Storage to Computing”. The lecture will be held on 14th December 2022 at 12am Berlin time. The Distiguished Lecture will be held in hybrid format, on site (TH Mittelhessen, Wiesenstraße… Read more →

One of the challenges encountered by research on novel electronic devices is to compare devices based on different materials in a consistent way.RWTH Professor Max Lemme and colleagues from USA, China, and Belgium have now proposed a set of clear guidelines for benchmarking key parameters and performance metrics of emergent field-effect transistors. The guidelines have… Read more →

The 6th Symposium on Schottky Barrier MOS (SB-MOS) deviceswas held on September 8, 2022at the Competence Center for Nanotechnology and Photonics atTHM – University of Applied Sciences. It was organized by the EDS Germany Chapter and co-sponsored by THM. It was attended by approx. 50 participants in hybrid. After a short welcome of Prof. Kloes with… Read more →

The EDS Germany Chapter organized a hybrid MiniColloqium entitled “Memristive Devices” on September 7, 2022. It was held in the timeframe of the 6th Schottky Barrier Symposium on MOS Devices at the Competence Center for Nanotechnology and Photonics (NanoP) of THM – University of Applied Sciences. It was organized by the EDS Germany Chapter and co-sponsored… Read more →