The EDS Germany Chapter and NanoP proudly presents Elena Gnani from University of Bologna, Bologna, Italy for a Distinguished Lecture on “Tunnel FETs: Device Physics and Realizations”. The lecture will be held on 18th January 2021 at 3pm Berlin time. Interest participants please register via IEEE vTools by the following link:

Biography Elena Gnani:
Prof. Gnani is a Professor at University of Bologna, Bologna, Italy, where she is involved in research on the study of new device concepts able to reduce the power consumption of integrated circuits.

She received the M.S. degree in Electrical Engineering in 1999 “summa cum laude” and the Ph.D degree in Electrical Engineering and Computer Science in 2003 with a dissertation entitled “Physical models for MOS nanostructures”, both from the University of Bologna.

She is a Senior Member of IEEE and serve in various comittees. She has more than 1690 citiations and an h-index of 23 of the last 5 years.