One of the challenges encountered by research on novel electronic devices is to compare devices based on different materials in a consistent way.RWTH Professor Max Lemme and colleagues from USA, China, and Belgium have now proposed a set of clear guidelines for benchmarking key parameters and performance metrics of emergent field-effect transistors. The guidelines have… Read more →

The 6th Symposium on Schottky Barrier MOS (SB-MOS) deviceswas held on September 8, 2022at the Competence Center for Nanotechnology and Photonics atTHM – University of Applied Sciences. It was organized by the EDS Germany Chapter and co-sponsored by THM. It was attended by approx. 50 participants in hybrid. After a short welcome of Prof. Kloes with… Read more →

The EDS Germany Chapter organized a hybrid MiniColloqium entitled “Memristive Devices” on September 7, 2022. It was held in the timeframe of the 6th Schottky Barrier Symposium on MOS Devices at the Competence Center for Nanotechnology and Photonics (NanoP) of THM – University of Applied Sciences. It was organized by the EDS Germany Chapter and co-sponsored… Read more →