The SiNANO Summer School 2024 took place at Technische Hochschule Mittelhessen – University of Applied Sciences Giessen, Germany, from 30 September to 2 October 2024. The event was initiated as part of a cooperation between the SiNANO Institute, the IEEE EDS Chapter Germany, the IEEE Student Branch Gießen and THM and organised by Prof. Dr. Alexander Klös, Prof. Dr. Mike Schwarz and Marcia Lins from the Centre of Competence for Nanotechnology and Photonics (NanoP) at THM. It attracted 16 renowned speakers from all over Europe to Central Hessen, who travelled from Germany, Great Britain, Portugal, Sweden, Austria and France, among others. Particularly pleasing was the participation of 20 international PhD students, post-docs and experts from industry, some of whom travelled from as far away as China, as well as 5 doctoral students from the DMRG working group of the Centre of Competence NanoP at THM. The event was sponsored by the IEEE, the SiNANO Institute and the THM.

Participants of the IEEE Mini Colloquium and SiNANO Summer School 2024

The Summer School started with an IEEE Mini Colloquium organised by the IEEE EDS Chapter Germany, which brought together leading experts in the field of simulation and technology for emerging devices. The topics included:

• Prof. Enrico Sangiorgi, University of Bologna – The European Chips Act and its impact on the Italian research ecosystem
• Prof. Maria Merlyne De Souza, The University of Sheffield – AI techniques to predict the behavior of neuromorphic devices
• Prof. Tibor Grasser, Technische Universität Wien – Insulators for Devices Based on 2D Materials
• Dr. Mario Lanza, National University of Singapore – Hybrid 2D/CMOS microchips for memristive applications
• Prof. Mikael Östling, KTH Royal Institute of Technology – The opportunities with SiC devices for the sustainable societal challenges

The welcome event on the first evening provided an inviting opportunity to explore the Mathematikum, the mathematics museum of the city of Giessen. After a short introduction the scientists present wandered around the museum with great enthusiasm. This informal atmosphere provided an excellent opportunity to network with other participants in an uncomplicated way, both on a personal and professional level, and to share common interests. It was a successful kick-off event, which promoted the mutual getting to know each other and the scientific exchange in a pleasant and inspiring way.

A variety of presentations and discussion groups were also offered on the second day of the event. After and between the presentations, participants had the opportunity to exchange ideas with experts from renowned institutions.

The presentations were:

• Eduardo Pérez Diez, BTU Cottbus-Senftenberg – Promises and Challenges of Optimized 130 nm CMOS-integrated RRAM Devices for Hardware-based Artificial Neural Networks
• Pedro Barquinha – Moving beyond displays with oxide transistors: trends & challenges
• Irina Ionica, Grenoble INP – UGA – Silicon-on-insulator: one substrate and numerous opportunities
• Ehrenfried Seebacher, ams OSRAM – Compact Modeling for Integrated Sensors and Circuits in CMOS Technology
• Thomas Gneiting, AdMOS GmbH Advanced Modeling Solutions – SPICE libraries for modern process design kits
• Viktor Sverdlov, TU Wien – Modeling advanced magnetoresistive devices

After the lectures of the second day, a poster session took place, which focussed on the exchange of ideas with other experts in the field of nanoelectronics and gave PhD students, postdocs and young researchers the important opportunity to present their current work.

Participants of the IEEE Mini Colloquium and SiNANO Summer School 2024

The last day continued with a series of exciting presentations:

• Qing-Tai Zhao, Forschungszentrum Jülich – Toward ultra-low power Cryogenic CMOS
• Prof. Vihar Georgiev, University of Glasgow – Multi-Scaled Simulations and Modelling of Novel Materials and Electronic Devices
• Elena Gnani, University of Bologna – Trends and challenges in Beyond-CMOS devices for the next decade
• Fabian Stammler, Bosch – Inspiring the Next Generation in MEMS Innovation
• Mingchun Tang, Infineon Technologies – Device characterization and modeling from industrial point of view

After the presentations on the third day, Prof. Dr. Alexander Klös and Prof. Dr. Mike Schwarz closed the event and thanked all speakers and participants for their contribution, the mentioned sponsors for making the event possible and Marcia Lins for organising it. The Summer School 2024 was a successful joint project that promoted both knowledge transfer and intensive exchange within the research community. We are excited about the future and look forward to more insightful events in the field of nanotechnology at THM.

The EDS Germany Chapter and University of Stuttgart proudly presents Pedram Khalili from Northwestern University, USA for a Distinguished Lecture. The lecture will be held on 9th October 2024. Interest participants please register via IEEE vTools by the following link: https://events.vtools.ieee.org/m/433574

On December 14, 2023, a distinguished lecture titled “The Basics and Evolution of Organic Devices” was delivered by Prof. Benjamin Iniguez, an IEEE Fellow from URV. The event, organized by Prof. Alexander Kloes and Prof. Mike Schwarz of the Competence Center for Nanotechnology and Photonics (NanoP) at THM – University of Applied Sciences, Germany, drew the participation of 25 attendees.

During the lecture, Prof. Iniguez provided an overview of the historical development of the first Thin-Film Transistor (TFT) devices leading up to the present day. He delved into the details of their properties, benefits, and applications. Subsequently, Prof. Iniguez shifted the focus to Organic Light-Emitting Diode (OLED) devices, offering a historical perspective and discussing the applications and future trends of these devices. The lecture concluded with an overview of Organic Photovoltaic (OPV) devices, covering their current efficiencies in laboratory settings and industrial applications.

Prof. Benjamin Iniguez celebrating the 75 anniversary of the transistor in front of the audience.

This distinguished lecture was part of the celebration of the 75th anniversary of the transistor and showcased one of the many use cases that have emerged over the last few decades. Participants were intrigued by the revelation that the invention of the transistor ultimately paved the way for the development of technologies found in today’s applications.

The EDS Germany Chapter and NanoP proudly presents Benjamin Iniguez from URV, Spain for a Distinguished Lecture on “The Basics and Evolution of Organic Devices”. The lecture will be held on 14th December 2023 at 4pm Berlin time. Interest participants please register via IEEE vTools by the following link: https://events.vtools.ieee.org/m/383286

Benjamin Iniguez Biography: Benjamin Iniguez obtained the Ph D in Physics in 1992 and 1996, respectively, from the Universitat de les Illes Balears (UIB). From February 1997 to September 1998 he was working as a Postdoctoral Researcher at the Rensselaer Polytecnhnic Institute in Troy (NY, USA). From September 1998 to January 2001 he was working as a Postdoctoral Scientist in the Université catholique de Louvain (Louvain-la-Neuve, Belgium), supported by two Marie Curie Fellowships from the European Commission. In February 2001 he joined the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV), in Tarragona, Catalonia, Spain) as Titular Professor. In February 2010 he became Full Professor at URV. He obtained the Distinction from the Generalitat for the Promotion of University Research in 2004 and the ICREA Academia Award (the highest award for university professors in Catalonia, from ICREA Institute) in 2009 and 2014, for a period of 5 years each. He led one EU-funded project (“COMON”, 2008-12) devoted to the compact modeling of nanoscale semiconductor devices and he is currently leading one new EU-funded project (DOMINO, 2014-18) targeting the compact modeling of organic and oxide TFTs. His main research interests are the characterization, parameter extraction and compact modelling of emerging semiconductor devices, in particularorganic and oxide Thin-Film Transistors, nanoscale Multi-Gate MOSFETs and GaN HEMTs. He has published more than 150 research papers in international journals and more than 130 abstracts in proceedings of conferences.

The 7th Symposium on Schottky Barrier MOS (SB-MOS) devices was held on September 28/29, 2023 at the Ecole Polytechnique in Palaiseau. It was a joint chapter event organized by the EDS France and Germany Chapter and co-sponsored by Ecole Polytechnique and CNRS. It was attended by approx. 30 participants in presence and hybrid format.

After a short welcome of Dr. Laurie Calvet from CNRS-Ecole Polytechnique (FR) with a detailed schedule, the presentations were started by the chair Kham Niang with an inspiring talk of Dr. Calvet on the topic of “The Schottky barrier transistor in emerging electronic devices”. She reviewed the variety of applications and material systems for over 60 years and introduced the SB transistor. She started with an overview of the device modeling and presented the two large classes of SB devices: 1) those that aim to reduce the Schottky barrier and 2) those that aim to take advantage of it. The talk concluded with a series of questions meant to serve as the starting point for the panel discussion later in the afternoon.

The next talk entitled “Silicon-Germanium Nanosheet Schottky FETs, from Contact Properties to Runtime Reconfigurable Circuit Demonstrators” was given by Prof. Walter Weber, TU Vienna (AT). Prof. Weber offered new insights of Silicon germanium (SixGe1-x). While the Silicon germanium (SixGe1-x) active regions have been intensively investigated for the realization of both bipolar and field effect devices over the past decades, the realization of ultrathin-body SixGe1-x transistors, in particular Schottky contact transistors, with high germanium channel content has been hampered by instabilities of the semiconductor interfaces towards metals and insulators. Prof. Weber discussed the combination of advances in ultra-low-temperature epitaxy, contact- and interface- solid state Al diffusion processes as well as reliable surface passivation measures that allow for the realization of ultrathin SixGe1-xnanosheet Schottky contact FETs being integrated on commercially available silicon-on-insulator substrates. He offered high resolution images of the obtained Schottky SixGe1-x devices with abrupt Al contacts which form a base technology for the realization of future contenders of electronic devices beyond the scope of the industrial roadmaps that profit from the abrupt Schottky junctions and high germanium content. Finally, Prof. Weber showed the possibilities to runtime reconfigurable transistors, neuromorphic devices and cryogenic quantum devices can be realized from the same technological platform.

The symposium continued with “DC Compact Modeling of Schottky Barrier Field-Effect Transistors at Deep Cryogenic Temperatures”. The PhD candidate Christian Römer from THM (DE) discussed Schottky barrier field-effect transistors as candidates for applications at cryogenic temperatures, since its characteristics improve with decreasing temperatures. He presented a physics-based DC compact model to calculate the injection tunneling current through a device’s Schottky barrier. A verification of the compact model was performed by measurements at temperatures around 5 K.

The final part of the first workshop day was the panel discussion on the question “What is the future of Schottky barrier devices?”. At the panel Dr. Calvet, Prof. Weber and PhD candidate Römer offered their opinion and various questions we discussed from different aspects.

Participants of the 7th Symposium on Schottky Barrier MOS (SB-MOS) devices.

The second workshop day was chaired by Prof. Weber and started with the talk entitled “Ferroelectric Schottky barrier transistor for neuromorphic computing” by Prof. Qing-Tai Zhao from the Forschungszentrum Jülich (DE). Prof. Zhao offered the challenges of the slow and ambipolar switching behavior of Schottky barrier MOSFETs which poses certain challenges for logic applications. Nevertheless, during his presentation he explored its potential application in neuromorphic computing when combined with a ferroelectric gate oxide. Prof. Zhao discussed the implementation of artificial synapses and capacitorless neurons using ferroelectric Schottky barrier transistors. By this novel approach he offered advantages for advancing the field of neuromorphic computing.

The next talk was given by Prof. Radu Sporea from University of Surrey (UK). Before he started with the talk of “Recent implementations of source-gated transistors and circuits with high gain”, Prof. Sporea shortly introduced the campus of Surrey where the next Symposium of Schottky Barrier MOS devices will take place. Then he continued with the source-gated transistor (SGT), which one is celebrating 20 years since its invention and presented that some of the more fundamental limitations of these devices have been explored and gradually overcome. The latest advances in exploiting the SGT’s high intrinsic gain, along with a roundup of essential design rules of thumb were offered.

Afterwards, Prof. Alexander Kloes from THM (DE) presented “Evaluation of approaches for analytical calculation of tunneling currents in Schottky barrier transistors”. He explained the different methods to calculate the transmission coefficient in the tunneling equation, explaining why compact modeling of tunneling currents is so challenging. Prof. Kloes reviewed the analytical calculation of a quantum wave based current transport through Schottky barriers that are suitable for compact modeling. He focused on a new promising approach based on the wavelet transform.

“Indium Gallium Zinc Oxide Source-Gated Transistors” by PhD candidate Kham Niang of University of Cambridge (UK) was the next talk. She discussed the use of amorphous oxide semiconductor (AOS) thin film transistors (TFTs)as SGTs. She presented the fabrication and performance of recent IGZO SGTs and discussed in particular the challenges in realizing a Schottky contact between AOS and high work function metal, and presented various methods adopted to mitigate this problem.

The presentations continued with “TCAD simulation studies of source-gated p-type CuO TFTs” by PhD candidate Qi Chen from the Université catholique de Louvain (UCLouvain) (BE). Source-gated p-type CuO TFTs with HfO2 gate dielectric were studied using TCAD tools. Based on parameters extracted from experiments, the gate modulation of the source barrier was investigated varying the thicknesses of CuO and HfO2 and the Schottky barrier height at the source contact. The optimal structure design was further explored to obtain good transconductance and output conductance parameters for circuit design.

Afterwards Prof. Benjamin Iniguez from URV (ES) gave a talk entitled “Compact modeling of the nonlinear contact effects in Organic Thin Film Transistors”. He presented the nonlinear contact effects due to the presence of Schottky barrier at the source-channel interface which may significantly affect the I-V characteristics in Organic Thin Film Transistors. He reviewed four different models that can be used for compact modeling.

The final talk was given by PhD candidate Patryk Golec from University of Surrey (UK). His talk on “A Source-Gated Transistor Compact Model Designed Using TCAD Simulations” offered a compact model developed for a source gated transistor (SGT) using the data obtained from TCAD simulation. He made some fundamental simulation to explain the fundamental different current injection mechanism occurring at the source region. This causes the contact effects to be dominant in the SGT, as opposed to the TFT. With this the resulting compact model of an a-Si SGT describes the changes in device parameters within the source region.

Dr. Laurie Calvet closed the Symposium with some finally remarks, that Schottky barrier junctions offer a wide spectrum of applications and thanked all participants and organizers for realizing this SSBMOS.