The distinguished lecture on “Tunneling Graphene FET” was held in the timeframe of the virtual joint event of the Symposium on Schottky Barrier devices and the Graduated Students Meeting Student Meeting on Electronic Engineering at the Department of Electronic, Electrical and Automatic Control  Engineering of the University Rovira i Virgili (URV, Tarragona, Spain) on June 30, 2021. It was organized by the EDS Spain and Germany Chapter and co-sponsored by the NanoP from THM – University of Applied Sciences and University Rovira i Virgili. The DL was attended by 15 IEEE participants, as well as other non IEEE members.

The distinguished lecture of Prof. Dash from from Sambalpur University gave an overview and introduction to Moore´s law and technology revolution as well as the occurring scaling principle and issues with CMOS. Afterwards, he introduced the tunneling with its concept and devices (FETs). Followed by the emergence of Graphene and its relevant properties. Finally, Prof. Dash continued with Tunneling Graphene FETs and introduced the lateral tunneling architecture followed by the vertical tunneling architecture. Finally the DL was concluded with the GNR Tunneling FETs.